Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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SDG 7 Affordable and Clean Energy
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Dive into the research topics where Ho Gyoung Kim is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Thermal Confinement and Filtering Effect of SnSe by Insertion of Atomic-Layer-Deposited ZnO Interfacial Layer
Jung, M. J., Eun, S. M., Kim, H., Kim, S. K., Byun, J. & Choi, B. J., Dec 2025, In: Korean Journal of Chemical Engineering. 42, 14, p. 3545-3554 10 p.Research output: Contribution to journal › Article › peer-review
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The Temperature-Dependent Interface States and the Reverse Current Conduction Mechanism of Single-Crystal ZnO Schottky Diodes
Kim, H., Feb 2025, In: Materials Transactions. 66, 2, p. 153-159 7 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes
Kim, H., Apr 2024, In: Transactions on Electrical and Electronic Materials. 25, 2, p. 141-152 12 p.Research output: Contribution to journal › Review article › peer-review
Open Access13 Scopus citations -
BARRIER INHOMOGENEITY OF PT/GAN JUNCTIONS WITH A LOW-TEMPERATURE ALD GROWN ZnO INTERLAYER
Kim, H., Won, Y. B. & Choi, B. J., 2024, In: Archives of Metallurgy and Materials. 69, 2, p. 459-463 5 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Characterization of interface states and investigation of possible current conduction mechanisms in the Pt, Au, Cu/n-InP Schottky diodes
Kim, H., 1 Sep 2024, In: Physica Scripta. 99, 9, 095959.Research output: Contribution to journal › Article › peer-review