Abstract
The recent semiconductor packaging technology is evolving into a high-performance system-in-packaging (SIP) structure, and copper-to-copper bonding process becomes an important core technology to realize SIP. Copper-tocopper bonding process faces challenges such as copper oxidation and high temperature and high pressure process conditions. In this study, the bonding interface quality of low-temperature copper-to-copper bonding using a two-step plasma treatment was investigated through quantitative bonding strength measurements. Our two-step plasma treatment formed copper nitride layer on copper surface which enables low-temperature copper bonding. The bonding strength was evaluated by the four-point bending test method and the shear test method, and the average bonding shear strength was 30.40 MPa, showing that the copper-to-copper bonding process using a two-step plasma process had excellent bonding strength.
| Translated title of the contribution | Bonding Strength Evaluation of Copper Bonding Using Copper Nitride Layer |
|---|---|
| Original language | Korean |
| Pages (from-to) | 55-60 |
| Number of pages | 6 |
| Journal | 마이크로전자 및 패키징학회지 |
| Volume | 27 |
| DOIs | |
| State | Published - Sep 2020 |