Abstract
As the performance and density of IC (integrated circuit) devices increase, power and signal integrities in the global interconnects of advanced packaging technologies are becoming more difficult. Thus, the global interconnect technologies should be designed to accommodate increased input/output (I/O) counts, improved power grid network integrity, reduced RC delay, and improved electrical crosstalk stability. This requirement resulted in the fine-pitch interconnects with a low-k dielectric in 3D packaging or wafer level packaging structure. This paper reviews an organicinorganic hybrid material as a potential dielectric candidate for the global interconnects. An organic-inorganic hybrid material called polysiloxane can provide spin process without high temperature curing, an excellent dielectric constant, and good mechanical properties.
Translated title of the contribution | Organic-inorganic Hybrid Dielectric with UV Patterning and UV Curing for Global Interconnect Applications |
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Original language | Korean |
Pages (from-to) | 1-7 |
Number of pages | 7 |
Journal | 마이크로전자 및 패키징학회지 |
Volume | 25 |
Issue number | 4 |
DOIs | |
State | Published - Dec 2018 |