Abstract
Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TFT) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT's behavior models implemented in SPICE tools, it can be easily added to them.
| Translated title of the contribution | Simulation Method of Threshold Voltage Shift in Thin-film Transistors |
|---|---|
| Original language | Korean |
| Pages (from-to) | 341-346 |
| Number of pages | 6 |
| Journal | 전기전자재료학회논문지 |
| Volume | 26 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2013 |