Abstract
A four point bending apparatus has been developed to measure semiconductor sensor piezoresistance insidea four inch probe station. The apparatus has a footprint of 60×83 mm2 and can apply 10 μm displacements using a verticalmicrometer stage. We used finite element analysis to predict and improve the accuracy of the instrument. Finally straingauge attached on a silicon test piece was used to experimentally verify the setup.
| Translated title of the contribution | A Four-point Bending Probe Station for Semiconductor Sensor Piezoresistance Measurement |
|---|---|
| Original language | Korean |
| Pages (from-to) | 35-39 |
| Number of pages | 5 |
| Journal | 마이크로전자 및 패키징학회지 |
| Volume | 20 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2013 |