Abstract
The effects of thickness and surface grinding condition on the fracture strength of Si wafer with a thickness under $100{\mu}m$ were investigated. Fracture strength was measured by ball breaker test for about 330 dies (size: $4mm{\times}4mm$) per each wafer. For statistical analysis of the fracture strength, scale factor was determined from Weibull plot. Ball breaker fracture strength was observed to increase with decreasing thickness of silicon die. For the silicon dies of different surface conditions, ball breaker fracture strength was high in the order of polished, ground (#4800), and ground (#320 grit) specimen. Probabilistic fracture strength (i.e., scale factor) increased with decreasing surface roughness of silicon die.
| Translated title of the contribution | Evaluation of Fracture Strength of Silicon Die with Surface Condition by Ball Breaker Test |
|---|---|
| Original language | Korean |
| Pages (from-to) | 178-184 |
| Number of pages | 7 |
| Journal | 열처리공학회지 |
| Volume | 26 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jul 2013 |