산화 갈륨을 활용한 광검출 소자의 동작 특성 분석 연구

In a semiconductor system, the operation of sensors plays a crucial role in recognizing information, serving as the starting point for processing external information. This study evaluates the applicability of semiconductor systems by analyzing the operational characteristics of ultraviolet (UV) detection devices using gallium oxide. Gallium oxide exhibits a property where its resistance changes in response to UV light, making it feasible to implement detection devices utilizing this material. However, to determine its applicability in semiconductor systems, detailed studies on its operational characteristics are necessary. In this study, by varying the size of the electrodes, we assessed whether the formation of current paths in gallium oxide in response to UV light is localized. Additionally, we confirmed the response speed to UV light, comparable to commercially available products, through electrical measurements. Through this, we verified the commercial applicability of gallium oxide and its potential integration into various semiconductor systems.