Abstract
We investigated the effects of atmospheric hydrogen plasma treatment on Cu-Cu direct bonding. Hydrogen plasma was effective in reducing the surface oxide layer of Cu thin film, which was confirmed by GIXRD analysis. It was observed that larger plasma input power and longer treatment time were effective in terms of reduction and surface roughness. The interfacial adhesion energy was measured by DCB test and it was observed to decrease as the bonding temperature decreased, resulting in bonding failure at bonding temperature of 200oC. In case of wet treatment, strong Cu- Cu bonding was observed above bonding temperature of 250oC.
| Translated title of the contribution | H2 Plasma Pre-treatment for Low Temperature Cu-Cu Bonding |
|---|---|
| Original language | Korean |
| Pages (from-to) | 109-114 |
| Number of pages | 6 |
| Journal | 마이크로전자 및 패키징학회지 |
| Volume | 28 |
| Issue number | 4 |
| State | Published - Dec 2021 |