Abstract
Semiconductor packages are increasingly moving toward miniaturization, lighter and high performance.
Futhermore, packages become thinner. Thin packages will generate serious reliability problems such as warpage, crack and other failures. Reliability problems are mainly caused by the CTE mismatch of various package materials. Therefore,proper selection of the package materials and geometrical optimization is very important for controlling the warpage and the stress of the package. In this study, we investigated the characteristics of the warpage and the stress of several packages currently used in mobile devices such as CABGA, fcSCP, SCSP, and MCP. Warpage and stress distribution are analyzed by the finite element simulation. Key material properties which affect the warpage of package are investigated such as the elastic moduli, CTEs of EMC molding and the substrate. Geometrical effects are also investigated including the thickness or size of EMC molding, silicon die and substrate. The simulation results indicate that the most influential factors on warpage are EMC molding thickness, CTE of EMC, elastic modulus of the substrate. Simulation results show that warpage is the largest for SCSP. In order to reduce the warpage, DOE optimization is performed, and the optimization results show that warpage of SCSP becomes 10 μm
Futhermore, packages become thinner. Thin packages will generate serious reliability problems such as warpage, crack and other failures. Reliability problems are mainly caused by the CTE mismatch of various package materials. Therefore,proper selection of the package materials and geometrical optimization is very important for controlling the warpage and the stress of the package. In this study, we investigated the characteristics of the warpage and the stress of several packages currently used in mobile devices such as CABGA, fcSCP, SCSP, and MCP. Warpage and stress distribution are analyzed by the finite element simulation. Key material properties which affect the warpage of package are investigated such as the elastic moduli, CTEs of EMC molding and the substrate. Geometrical effects are also investigated including the thickness or size of EMC molding, silicon die and substrate. The simulation results indicate that the most influential factors on warpage are EMC molding thickness, CTE of EMC, elastic modulus of the substrate. Simulation results show that warpage is the largest for SCSP. In order to reduce the warpage, DOE optimization is performed, and the optimization results show that warpage of SCSP becomes 10 μm
| Translated title of the contribution | Numerical Study of Warpage and Stress for the Ultra Thin Package |
|---|---|
| Original language | Korean |
| Pages (from-to) | 49-60 |
| Number of pages | 12 |
| Journal | 마이크로전자 및 패키징학회지 |
| Volume | 17 |
| Issue number | 4 |
| State | Published - Dec 2010 |