실험계획법을 통한 구리 질화물 패시베이션 형성을 위한 아르곤 플라즈마 영향 분석

To protect the Cu surface from oxidation in air, a two-step plasma process using Ar and N2 gases was studied to form a copper nitride passivation as an anti-oxidant layer. The Ar plasma removes contaminants on the Cu surface and it activates the surface to facilitate the reaction of copper and nitrogen atoms in the next N2 plasma process. This study investigated the effect of Ar plasma on the formation of copper nitride passivation on Cu surface during the twostep plasma process through the full factorial design of experiment (DOE) method. According to XPS analysis, when using low RF power and pressure in the Ar plasma process, the peak area of copper oxides decreased while the peak area of copper nitrides increased. The main effect of copper nitride formation in Ar plasma process was RF power, and there was little interaction between plasma process parameters.