Abstract
The reliability of a solid-state transformer (SST) is one of the important aspects to consider when replacing a conventional low-frequency passive transformer with SST for urban railway vehicles. Lifetime evaluation of SST in the design phase is therefore essential in guaranteeing a certain SST reliability. In this study, a lifetime evaluation of power semiconductor devices in SST is performed with respect to temperature stress. For a case study, a 3 MW SST with three kinds of power modules (one IGBT module and two SiC-MOSFET modules) is used for the lifetime estimation under the operation profile of urban railway vehicles.
| Translated title of the contribution | Operation-Profile Based Lifetime Evaluation of Power Semiconductor Devices in Solid-State Transformer for Urban Railway Vehicles |
|---|---|
| Original language | Korean |
| Pages (from-to) | 496-502 |
| Number of pages | 7 |
| Journal | 전력전자학회 논문지 |
| Volume | 25 |
| Issue number | 6 |
| DOIs | |
| State | Published - 2020 |