Abstract
In this paper the author proposes a method of implementing a numerical model for threshold voltage (Vth) shift in organic thin-film transistors (OTFTs) into SPICE tools. Vth shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the Vth shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent Vth shift in AIM-SPICE and the results show the proposed method is applicable to various types of Vth shifts.
| Translated title of the contribution | Modeling and Simulation of Threshold Voltage Shift in Organic Thin-film Transistors |
|---|---|
| Original language | Korean |
| Pages (from-to) | 92-97 |
| Number of pages | 6 |
| Journal | 전기전자재료학회논문지 |
| Volume | 26 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 2013 |