Abstract
Existing Si-based semiconductors are being replaced with wide bandgap materials such as SiC and GaN for more efficient operation in power devices, and this has stimulated extensive research on technologies to form a heat-tolerant joint. Sinter-bonding technologies using silver (Ag) with excellent thermal conductivity have been in the spotlight, and pastes containing Ag particles have been the developed and applied. In this paper, recent studies on sinter-bonding technologies using Ag-particle-based paste, which can be classified into pressure-assisted and pressureless processes, were analyzed. The size and shape of the Ag particles, type of solvent or formulation, type of metal finish, atmosphere, and bonding temperature/time were considered, as typical process parameters. The effects of changes in the parameters on bonding results were compared and analyzed, with a focus on shear strength value and microstructure. Contrary to expectations, recently reported pressureless sinter-bonding results were found to exhibit excellent bonding properties. For example, a bonding strength approaching 35 MPa was reported for pressureless sinter-bonding at 250 °C for 10 min in air. The excellent bonding result can be attributed to the use of an optimal solvent during the preparation of the paste.
| Translated title of the contribution | Chip Sinter-Bonding Using Ag-Based Paste for Power Semiconductor Devices |
|---|---|
| Original language | Korean |
| Pages (from-to) | 482-492 |
| Number of pages | 11 |
| Journal | 대한용접접합학회지 |
| Volume | 37 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 2019 |