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저온 Cu-Cu본딩을 위한 12nm 티타늄 박막 특성 분석
Translated title of the contribution
:
Evaluation of 12nm Ti Layer for Low Temperature Cu-Cu Bonding
Sarah Eunkyung Kim
Dept. of Semiconductor Engineering
Research output
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Article
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peer-review
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Material Science
Surface (Surface Science)
100%
Semiconductor Device
100%
Titanium
100%
Surface Roughness
50%
Shear Strength
50%
Engineering
Low-Temperature
100%
Semiconductor Device
66%
Process Unit
33%
Shear Strength
33%
Room Temperature
33%
Grinding (Machining)
33%