Abstract
System-in-package (SIP) technology using heterogeneous integration is becoming the key of next-generation semiconductor packaging technology, and the development of low temperature Cu bonding is very important for high-performance and fine-pitch SIP interconnects. In this study the low temperature Cu bonding and the anti-oxidation effect of copper using porous Ag nanolayer were investigated. It has been found that Cu diffuses into Ag faster than Ag diffuses into Cu at the temperatures from 100℃ to 200℃, indicating that solid state diffusion bonding of copper is possible at low temperatures. Cu bonding using Ag nanolayer was carried out at 200℃, and the shear strength after bonding was measured to be 23.27 MPa.
| Translated title of the contribution | Effect of Ag Nanolayer in Low Temperature Cu/Ag-Ag/Cu Bonding |
|---|---|
| Original language | Korean |
| Pages (from-to) | 59-64 |
| Number of pages | 6 |
| Journal | 마이크로전자 및 패키징학회지 |
| Volume | 28 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jun 2021 |