150 Ghz complementary anti-parallel diode frequency tripler in 130 nm CMOS

Dongha Shim; Chuying Mao; Swaminathan Sankaran; K. O. Kenneth

doi:10.1109/LMWC.2010.2087321

150 Ghz complementary anti-parallel diode frequency tripler in 130 nm CMOS

Dongha Shim
, Chuying Mao
, Swaminathan Sankaran
, K. O. Kenneth

Dept. of Manufacturing Systems and Design Engineering

Integrated Device Technology
Texas Instruments
University of Texas at Dallas

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The first complementary anti-parallel Schottky diode frequency tripler in CMOS is demonstrated. The tripler exhibits ∼34-dB minimum conversion loss, -24-dBm maximum output power at 150 GHz, and 3 db output frequency range of ∼10 GHz.

Original language	English
Article number	5680673
Pages (from-to)	43-45
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	21
Issue number	1
DOIs	https://doi.org/10.1109/LMWC.2010.2087321
State	Published - Jan 2011

Keywords

CMOS
complementary anti-parallel diode pair
frequency tripler
Schottky barrier diode
sub-terahertz

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10.1109/LMWC.2010.2087321

Cite this

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title = "150 Ghz complementary anti-parallel diode frequency tripler in 130 nm CMOS",

abstract = "The first complementary anti-parallel Schottky diode frequency tripler in CMOS is demonstrated. The tripler exhibits ∼34-dB minimum conversion loss, -24-dBm maximum output power at 150 GHz, and 3 db output frequency range of ∼10 GHz.",

keywords = "CMOS, complementary anti-parallel diode pair, frequency tripler, Schottky barrier diode, sub-terahertz",

author = "Dongha Shim and Chuying Mao and Swaminathan Sankaran and Kenneth, \{K. O.\}",

year = "2011",

month = jan,

doi = "10.1109/LMWC.2010.2087321",

language = "English",

volume = "21",

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journal = "IEEE Microwave and Wireless Components Letters",

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AU - Shim, Dongha

AU - Mao, Chuying

AU - Sankaran, Swaminathan

AU - Kenneth, K. O.

PY - 2011/1

Y1 - 2011/1

N2 - The first complementary anti-parallel Schottky diode frequency tripler in CMOS is demonstrated. The tripler exhibits ∼34-dB minimum conversion loss, -24-dBm maximum output power at 150 GHz, and 3 db output frequency range of ∼10 GHz.

AB - The first complementary anti-parallel Schottky diode frequency tripler in CMOS is demonstrated. The tripler exhibits ∼34-dB minimum conversion loss, -24-dBm maximum output power at 150 GHz, and 3 db output frequency range of ∼10 GHz.

KW - CMOS

KW - complementary anti-parallel diode pair

KW - frequency tripler

KW - Schottky barrier diode

KW - sub-terahertz

UR - https://www.scopus.com/pages/publications/78651307744

U2 - 10.1109/LMWC.2010.2087321

DO - 10.1109/LMWC.2010.2087321

M3 - Article

AN - SCOPUS:78651307744

SN - 1531-1309

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EP - 45

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 1

M1 - 5680673

ER -

150 Ghz complementary anti-parallel diode frequency tripler in 130 nm CMOS

Abstract

Keywords

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