Abstract
A harmonic cancellation technique based on a phase manipulation technique is presented for Ku-band voltage-controlled oscillators (VCO), achieving significant phase noise reduction, especially at the 1/f3 region. The proposed VCO incorporates an auxiliary PMOS transistor with dynamically controlled biasing to generate additional high-order components to compensate for the intrinsic phase difference between the high-order harmonic components of the main PMOS and NMOS cross-coupled transistors, establishing the required 180° phase difference (∆θ) between them. The alignment, facilitated by the proposed technique, significantly suppresses the undesired high-order harmonic components entering the tank’s capacitive path and disturbing its natural frequency. The proposed VCO is fabricated in 65nm CMOS technology, achieving a phase noise of −33.78 dBc/Hz at 1 kHz and -112 dBc/Hz at 1 MHz. The phase noise improvement reaches 5.56 dB at the 1/f3 region compared to a conventional complementary VCO. With a low power consumption of 4.5 mW, the proposed VCO achieves an excellent figure-of-merit (FoM) of −188.4 dBc/Hz with a tuning range of 1.1 GHz (8.1%) operating from 13 GHz to 14.1 GHz.
| Original language | English |
|---|---|
| Journal | IEEE Transactions on Circuits and Systems I: Regular Papers |
| DOIs | |
| State | Accepted/In press - 2026 |
Keywords
- High-order harmonics
- harmonic cancellation
- impulse sensitivity function (ISF)
- oscillator
- phase manipulation
- voltage-controlled oscillator (VCO)
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