245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining

Byeonghun Yun; Dae Woong Park; Kyung Sik Choi; Ho Jin Song; Sang Gug Lee

doi:10.1109/A-SSCC53895.2021.9634180

245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining

Byeonghun Yun, Dae Woong Park, Kyung Sik Choi, Ho Jin Song, Sang Gug Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

Lately, sub-THz bands are drawing attention for high data-rate communications where the H-band (220-325GHz) is a strong candidate for the next generation (6G) wireless communication systems. In terms of the level of integration and cost, CMOS has been the most attractive technology for commercialization.

Original language	English
Title of host publication	Proceedings - A-SSCC 2021
Subtitle of host publication	IEEE Asian Solid-State Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665443500
DOIs	https://doi.org/10.1109/A-SSCC53895.2021.9634180
State	Published - 2021
Event	2021 IEEE Asian Solid-State Circuits Conference, A-SSCC 2021 - Busan, Korea, Republic of Duration: 7 Nov 2021 → 10 Nov 2021

Publication series

Name	Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference

Conference

Conference	2021 IEEE Asian Solid-State Circuits Conference, A-SSCC 2021
Country/Territory	Korea, Republic of
City	Busan
Period	7/11/21 → 10/11/21

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10.1109/A-SSCC53895.2021.9634180

Cite this

Yun, B., Park, D. W., Choi, K. S., Song, H. J., & Lee, S. G. (2021). 245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining. In Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference (Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/A-SSCC53895.2021.9634180

Yun, Byeonghun ; Park, Dae Woong ; Choi, Kyung Sik et al. / 245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining. Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2021. (Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference).

@inproceedings{fa9f3b5e1bd041ea89905e5bbd2f182f,

title = "245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8\% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining",

abstract = "Lately, sub-THz bands are drawing attention for high data-rate communications where the H-band (220-325GHz) is a strong candidate for the next generation (6G) wireless communication systems. In terms of the level of integration and cost, CMOS has been the most attractive technology for commercialization.",

author = "Byeonghun Yun and Park, \{Dae Woong\} and Choi, \{Kyung Sik\} and Song, \{Ho Jin\} and Lee, \{Sang Gug\}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE Asian Solid-State Circuits Conference, A-SSCC 2021 ; Conference date: 07-11-2021 Through 10-11-2021",

year = "2021",

doi = "10.1109/A-SSCC53895.2021.9634180",

language = "English",

series = "Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings - A-SSCC 2021",

}

Yun, B, Park, DW , Choi, KS, Song, HJ & Lee, SG 2021, 245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining. in Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference. Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference, Institute of Electrical and Electronics Engineers Inc., 2021 IEEE Asian Solid-State Circuits Conference, A-SSCC 2021, Busan, Korea, Republic of, 7/11/21. https://doi.org/10.1109/A-SSCC53895.2021.9634180

245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining. / Yun, Byeonghun; Park, Dae Woong ; Choi, Kyung Sik et al.
Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2021. (Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Yun, Byeonghun

AU - Park, Dae Woong

AU - Choi, Kyung Sik

AU - Song, Ho Jin

AU - Lee, Sang Gug

PY - 2021

Y1 - 2021

N2 - Lately, sub-THz bands are drawing attention for high data-rate communications where the H-band (220-325GHz) is a strong candidate for the next generation (6G) wireless communication systems. In terms of the level of integration and cost, CMOS has been the most attractive technology for commercialization.

AB - Lately, sub-THz bands are drawing attention for high data-rate communications where the H-band (220-325GHz) is a strong candidate for the next generation (6G) wireless communication systems. In terms of the level of integration and cost, CMOS has been the most attractive technology for commercialization.

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U2 - 10.1109/A-SSCC53895.2021.9634180

DO - 10.1109/A-SSCC53895.2021.9634180

M3 - Conference contribution

AN - SCOPUS:85124001323

T3 - Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference

BT - Proceedings - A-SSCC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE Asian Solid-State Circuits Conference, A-SSCC 2021

Y2 - 7 November 2021 through 10 November 2021

ER -

Yun B, Park DW , Choi KS, Song HJ, Lee SG. 245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining. In Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2021. (Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference). doi: 10.1109/A-SSCC53895.2021.9634180

245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining

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