3차원 적층 집적회로에서 구리 TSV가 열전달에 미치는 영향

Sarah Eunkyung Kim; Sung Dong Kim

doi:10.6117/kmeps.2014.21.3.063

3차원 적층 집적회로에서 구리 TSV가 열전달에 미치는 영향

Translated title of the contribution: The Effects of Cu TSV on the Thermal Conduction in 3D Stacked IC

Sarah Eunkyung Kim, Sung Dong Kim

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we investigated the effects of Cu TSV on the thermal management of 3D stacked IC. Combination of backside point-heating and IR microscopic measurement of the front-side temperature showed evolution of hot spots in thin Si wafers, implying 3D stacked IC is vulnerable to thermal interference between stacked layers. Cu TSV was found to be an effective heat path, resulting in larger high temperature area in TSV wafer than bare Si wafer, and could be used as an efficient thermal via in the thermal management of 3D stacked IC.

Translated title of the contribution	The Effects of Cu TSV on the Thermal Conduction in 3D Stacked IC
Original language	Korean
Pages (from-to)	63-66
Number of pages	4
Journal	마이크로전자 및 패키징학회지
Volume	21
Issue number	3
DOIs	https://doi.org/10.6117/kmeps.2014.21.3.063
State	Published - Sep 2014

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10.6117/kmeps.2014.21.3.063

Cite this

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title = "3차원 적층 집적회로에서 구리 TSV가 열전달에 미치는 영향",

abstract = "In this study, we investigated the effects of Cu TSV on the thermal management of 3D stacked IC. Combination of backside point-heating and IR microscopic measurement of the front-side temperature showed evolution of hot spots in thin Si wafers, implying 3D stacked IC is vulnerable to thermal interference between stacked layers. Cu TSV was found to be an effective heat path, resulting in larger high temperature area in TSV wafer than bare Si wafer, and could be used as an efficient thermal via in the thermal management of 3D stacked IC.",

author = "Kim, \{Sarah Eunkyung\} and Kim, \{Sung Dong\}",

year = "2014",

month = sep,

doi = "10.6117/kmeps.2014.21.3.063",

language = "Korean",

volume = "21",

pages = "63--66",

journal = "마이크로전자 및 패키징학회지",

issn = "1226-9360",

publisher = "한국마이크로전자및패키징학회",

number = "3",

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AU - Kim, Sarah Eunkyung

AU - Kim, Sung Dong

PY - 2014/9

Y1 - 2014/9

N2 - In this study, we investigated the effects of Cu TSV on the thermal management of 3D stacked IC. Combination of backside point-heating and IR microscopic measurement of the front-side temperature showed evolution of hot spots in thin Si wafers, implying 3D stacked IC is vulnerable to thermal interference between stacked layers. Cu TSV was found to be an effective heat path, resulting in larger high temperature area in TSV wafer than bare Si wafer, and could be used as an efficient thermal via in the thermal management of 3D stacked IC.

AB - In this study, we investigated the effects of Cu TSV on the thermal management of 3D stacked IC. Combination of backside point-heating and IR microscopic measurement of the front-side temperature showed evolution of hot spots in thin Si wafers, implying 3D stacked IC is vulnerable to thermal interference between stacked layers. Cu TSV was found to be an effective heat path, resulting in larger high temperature area in TSV wafer than bare Si wafer, and could be used as an efficient thermal via in the thermal management of 3D stacked IC.

U2 - 10.6117/kmeps.2014.21.3.063

DO - 10.6117/kmeps.2014.21.3.063

M3 - Article

SN - 1226-9360

VL - 21

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EP - 66

JO - 마이크로전자 및 패키징학회지

JF - 마이크로전자 및 패키징학회지

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