Abstract
3D stacked IC is one of the promising candidates which can keep Moore's law valid for next decades. IC can be stacked through various bonding technologies and they were reviewed in this report, for example, wafer direct bonding and atomic diffusion bonding, etc. As an effort to reduce the high temperature and pressure which were required for high bonding strength in conventional Cu-Cu thermo-compression bonding, surface activated bonding, solid liquid inter-diffusion and direct bonding interface technologies are actively being developed.
| Translated title of the contribution | Wafer Level Bonding Technology for 3D Stacked IC |
|---|---|
| Original language | Korean |
| Pages (from-to) | 7-13 |
| Number of pages | 7 |
| Journal | 마이크로전자 및 패키징학회지 |
| Volume | 20 |
| Issue number | 1 |
| DOIs | |
| State | Published - Mar 2013 |