Abstract
In this study, flexural strength and fracture behavior of silicon die from single crystalline silicon wafer were investigated as a function of thickness. Silicon wafers with various thickness of 300, 200, 180, 160, 150, and 100 μm were prepared by mechanical grinding and polishing of as-saw wafers. Flexural strength of 40 silicon dies (size: 62.5 mm ×4 mm) from each wafer was measured by four point bending test, respectively. For statistical analysis of flexural strength,shape factor(i.e., Weibull modulus) and scale factor were determined from Weibull plot. Flexural strength reflecting both statistical fracture probability and size (thickness) effect of brittle silicon die was obtained as a linear function of die thickness. Fracture appearance was discussed in relation with measured fracture strength.
| Translated title of the contribution | Evaluation of Flexural Strength of Silicon Die with Thickness by 4 Point Bending Test |
|---|---|
| Original language | Korean |
| Pages (from-to) | 15-21 |
| Number of pages | 7 |
| Journal | 마이크로전자 및 패키징학회지 |
| Volume | 18 |
| Issue number | 1 |
| State | Published - Mar 2011 |