Abstract
A 500 GHz heterodyne imager adopting a source-driven fourth subharmonic single balanced resistive mixer is implemented in 65-nm CMOS technology. The adopted passive mixer improves the port-to-port isolation and minimizes the input matching loss. At an LO power of 5 dBm, the imager achieves a conversion loss and double sideband noise figure of 30.2 dB and 51 dB, respectively, which corresponds to −93 dBm and 15.8 fW/Hz0.5 of sensitivity and the effective noise equivalent power, respectively, assuming a noise bandwidth of 1 kHz. To the best of authors' knowledge, the proposed work is the highest frequency implementation as a CMOS-based heterodyne imagers adopting resistive mixers.
| Original language | English |
|---|---|
| Pages (from-to) | 683-687 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 62 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1 Feb 2020 |
Keywords
- CMOS
- heterodyne imager
- mixer
- THz
- THz imaging