77 GHz power amplifier MMIC using 0.1 μm double-deck shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si substrate

Dong Hwan Kim; Ji Hoon Kim; Su Keun Eom; Min Seong Lee; Kwang Seok Seo

77 GHz power amplifier MMIC using 0.1 μm double-deck shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si substrate

Dong Hwan Kim, Ji Hoon Kim, Su Keun Eom, Min Seong Lee, Kwang Seok Seo

Dept. of Mechanical System and Design Engineering

Seoul National University

Research output: Contribution to conference › Paper › peer-review

5 Scopus citations

Abstract

This paper describes the demonstration of 77 GHz gallium nitride (GaN) power amplifier (PA) on a silicon substrate. The PA monolithic microwave IC (MMIC) was fabricated by using developed AlGaN/GaN HEMTs on Si with double-deck shaped (DDS) field-plate gate with f_max of 160 GHz (f_T = 70 GHz) and a breakdown voltage of over 70 V. The demonstrated 3-stage power amplifier exhibited output power with 20.1 dBm at 77 GHz for 18 V drain bias.

Original language	English
Pages	241-244
Number of pages	4
State	Published - 2014
Event	2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 - Denver, CO, United States Duration: 19 May 2014 → 22 May 2014

Conference

Conference	2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014
Country/Territory	United States
City	Denver, CO
Period	19/05/14 → 22/05/14

Keywords

AlGaN/GaN HEMTs
DDS gate
MMICs
Millimeter-wave
PA

Cite this

@conference{861a3ed1791749a3bf583565e756ce08,

title = "77 GHz power amplifier MMIC using 0.1 μm double-deck shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si substrate",

abstract = "This paper describes the demonstration of 77 GHz gallium nitride (GaN) power amplifier (PA) on a silicon substrate. The PA monolithic microwave IC (MMIC) was fabricated by using developed AlGaN/GaN HEMTs on Si with double-deck shaped (DDS) field-plate gate with fmax of 160 GHz (fT = 70 GHz) and a breakdown voltage of over 70 V. The demonstrated 3-stage power amplifier exhibited output power with 20.1 dBm at 77 GHz for 18 V drain bias.",

keywords = "AlGaN/GaN HEMTs, DDS gate, MMICs, Millimeter-wave, PA",

author = "Kim, \{Dong Hwan\} and Kim, \{Ji Hoon\} and Eom, \{Su Keun\} and Lee, \{Min Seong\} and Seo, \{Kwang Seok\}",

year = "2014",

language = "English",

pages = "241--244",

note = "2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 ; Conference date: 19-05-2014 Through 22-05-2014",

}

77 GHz power amplifier MMIC using 0.1 μm double-deck shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si substrate. / Kim, Dong Hwan; Kim, Ji Hoon; Eom, Su Keun et al.
2014. 241-244 Paper presented at 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014, Denver, CO, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - 77 GHz power amplifier MMIC using 0.1 μm double-deck shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si substrate

AU - Kim, Dong Hwan

AU - Kim, Ji Hoon

AU - Eom, Su Keun

AU - Lee, Min Seong

AU - Seo, Kwang Seok

PY - 2014

Y1 - 2014

N2 - This paper describes the demonstration of 77 GHz gallium nitride (GaN) power amplifier (PA) on a silicon substrate. The PA monolithic microwave IC (MMIC) was fabricated by using developed AlGaN/GaN HEMTs on Si with double-deck shaped (DDS) field-plate gate with fmax of 160 GHz (fT = 70 GHz) and a breakdown voltage of over 70 V. The demonstrated 3-stage power amplifier exhibited output power with 20.1 dBm at 77 GHz for 18 V drain bias.

AB - This paper describes the demonstration of 77 GHz gallium nitride (GaN) power amplifier (PA) on a silicon substrate. The PA monolithic microwave IC (MMIC) was fabricated by using developed AlGaN/GaN HEMTs on Si with double-deck shaped (DDS) field-plate gate with fmax of 160 GHz (fT = 70 GHz) and a breakdown voltage of over 70 V. The demonstrated 3-stage power amplifier exhibited output power with 20.1 dBm at 77 GHz for 18 V drain bias.

KW - AlGaN/GaN HEMTs

KW - DDS gate

KW - MMICs

KW - Millimeter-wave

KW - PA

UR - https://www.scopus.com/pages/publications/84906565720

M3 - Paper

AN - SCOPUS:84906565720

SP - 241

EP - 244

T2 - 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014

Y2 - 19 May 2014 through 22 May 2014

ER -

77 GHz power amplifier MMIC using 0.1 μm double-deck shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si substrate

Abstract

Conference

Keywords

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