77GHz low noise sub block MMICs with 120 nm in0.4AlAs/In 0.35GaAs metamorphic HEMTs

Sung Won Kim; Dong Hwan Kim; Jin Churl Her; Kyung Chul Jang; Woo Yeol Choi; Young Woo Kwon; Kwang K. Seo

doi:10.1109/EMICC.2006.282761

77GHz low noise sub block MMICs with 120 nm in_0.4AlAs/In _0.35GaAs metamorphic HEMTs

Sung Won Kim, Dong Hwan Kim, Jin Churl Her, Kyung Chul Jang, Woo Yeol Choi, Young Woo Kwon, Kwang K. Seo

Dept. of Mechanical System and Design Engineering

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In_0.4AlAs/In_0.35GaAs Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance g _m of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (f_T) of 172 GHz and a maximum oscillation frequency (f_max) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF.

Original language	English
Title of host publication	Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006
Publisher	IEEE Computer Society
Pages	103-106
Number of pages	4
ISBN (Print)	2960055187, 9782960055184
DOIs	https://doi.org/10.1109/EMICC.2006.282761
State	Published - 2006
Event	1st European Microwave Integrated Circuits Conference, EuMIC 2006 - Manchester, United Kingdom Duration: 10 Sep 2006 → 12 Sep 2006

Publication series

Name	Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Conference

Conference	1st European Microwave Integrated Circuits Conference, EuMIC 2006
Country/Territory	United Kingdom
City	Manchester
Period	10/09/06 → 12/09/06

Keywords

Cut-off frequency
Low noise amplifier
Metamorphic HEMT
Resistive mixer
Transconductance

Access to Document

10.1109/EMICC.2006.282761

Cite this

Kim, S. W., Kim, D. H., Her, J. C., Jang, K. C., Choi, W. Y., Kwon, Y. W., & Seo, K. K. (2006). 77GHz low noise sub block MMICs with 120 nm in_0.4AlAs/In _0.35GaAs metamorphic HEMTs. In Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006 (pp. 103-106). Article 4057584 (Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006). IEEE Computer Society. https://doi.org/10.1109/EMICC.2006.282761

@inproceedings{94c1d9be8d9c4bcfb7410bf1a5aa7051,

title = "77GHz low noise sub block MMICs with 120 nm in0.4AlAs/In 0.35GaAs metamorphic HEMTs",

abstract = "77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance g m of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (fT) of 172 GHz and a maximum oscillation frequency (fmax) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF.",

keywords = "Cut-off frequency, Low noise amplifier, Metamorphic HEMT, Resistive mixer, Transconductance",

author = "Kim, \{Sung Won\} and Kim, \{Dong Hwan\} and Her, \{Jin Churl\} and Jang, \{Kyung Chul\} and Choi, \{Woo Yeol\} and Kwon, \{Young Woo\} and Seo, \{Kwang K.\}",

year = "2006",

doi = "10.1109/EMICC.2006.282761",

language = "English",

isbn = "2960055187",

series = "Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006",

publisher = "IEEE Computer Society",

pages = "103--106",

booktitle = "Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006",

note = "1st European Microwave Integrated Circuits Conference, EuMIC 2006 ; Conference date: 10-09-2006 Through 12-09-2006",

}

Kim, SW, Kim, DH, Her, JC, Jang, KC, Choi, WY, Kwon, YW & Seo, KK 2006, 77GHz low noise sub block MMICs with 120 nm in_0.4AlAs/In _0.35GaAs metamorphic HEMTs. in Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006., 4057584, Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006, IEEE Computer Society, pp. 103-106, 1st European Microwave Integrated Circuits Conference, EuMIC 2006, Manchester, United Kingdom, 10/09/06. https://doi.org/10.1109/EMICC.2006.282761

77GHz low noise sub block MMICs with 120 nm in_0.4AlAs/In _0.35GaAs metamorphic HEMTs. / Kim, Sung Won; Kim, Dong Hwan; Her, Jin Churl et al.
Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006. IEEE Computer Society, 2006. p. 103-106 4057584 (Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 77GHz low noise sub block MMICs with 120 nm in0.4AlAs/In 0.35GaAs metamorphic HEMTs

AU - Kim, Sung Won

AU - Kim, Dong Hwan

AU - Her, Jin Churl

AU - Jang, Kyung Chul

AU - Choi, Woo Yeol

AU - Kwon, Young Woo

AU - Seo, Kwang K.

PY - 2006

Y1 - 2006

N2 - 77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance g m of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (fT) of 172 GHz and a maximum oscillation frequency (fmax) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF.

AB - 77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance g m of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (fT) of 172 GHz and a maximum oscillation frequency (fmax) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF.

KW - Cut-off frequency

KW - Low noise amplifier

KW - Metamorphic HEMT

KW - Resistive mixer

KW - Transconductance

UR - https://www.scopus.com/pages/publications/41549113866

U2 - 10.1109/EMICC.2006.282761

DO - 10.1109/EMICC.2006.282761

M3 - Conference contribution

AN - SCOPUS:41549113866

SN - 2960055187

SN - 9782960055184

T3 - Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

SP - 103

EP - 106

BT - Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

PB - IEEE Computer Society

T2 - 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Y2 - 10 September 2006 through 12 September 2006

ER -

Kim SW, Kim DH, Her JC, Jang KC, Choi WY, Kwon YW et al. 77GHz low noise sub block MMICs with 120 nm in_0.4AlAs/In _0.35GaAs metamorphic HEMTs. In Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006. IEEE Computer Society. 2006. p. 103-106. 4057584. (Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006). doi: 10.1109/EMICC.2006.282761