A 17–38 GHz Cascode Low-Noise Amplifier in 150-nm GaAs Adopting Simultaneous Noise- and Input-Matched Gain Stage with Shunt-Only Input Matching

This paper presents a 17–38 GHz wideband low-noise amplifier (LNA) designed in a 150-nm GaAs pHEMT process. The proposed amplifier adopts a cascode topology with an interstage inductor between the common-source (CS) and common-gate (CG) stages, and a series inductor at the source node of the CS stage for source degeneration. By incorporating these inductors in the amplification stage, simultaneous noise and input matching is facilitated, while achieving flat gain characteristics over a broad frequency range and ensuring stability. In addition, the amplification stage with inductors achieves input matching using only a shunt component in the DC bias path, without any series matching elements. This approach allows the amplifier to achieve simultaneous noise and input matching (SNIM), ensuring low-noise performance over a wide bandwidth. The simulation results show a flat gain of 20–23 dB and a low noise figure of 1.1–2.1 dB over the 17–38 GHz band.