TY - JOUR
T1 - A 201- and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency Gmax-Core With Dual-Band Matching
AU - Park, Dae Woong
AU - Yun, Byeonghun
AU - Utomo, Dzuhri Radityo
AU - Hong, Jong Phil
AU - Lee, Sang Gug
N1 - Publisher Copyright:
© 2011-2012 IEEE.
PY - 2023/5/1
Y1 - 2023/5/1
N2 - This work reports a concurrent dual-band amplifier with an extensive spacing between the two bands by adopting a proposed dual-frequency maximum achievable gain (Gmax) core with dual-band matching. The proposed dual-frequency Gmax-core can expand the difference between the two target frequencies by focusing on satisfying dominant gain-boosting condition and adopting a linear, lossy, and reciprocal-based design approach. Implemented in a 65-nm complementary metal-oxide-semiconductor (CMOS) process, a five-stage dual-band amplifier shows a peak power gain of 23.6 and 13.7 dB, 3 dB bandwidth of 5 and 17 GHz, saturated output power (Psat) of -1.2 and -2.2 dBm, and peak power-added efficiency of 2.1 and 1.5 % at 201 and 283 GHz, respectively, while consuming a dc power of 34.5 mW. The proposed amplifier is the first demonstration of the concurrent dual-band amplifier operating at G- (140-220 GHz) and H- (220-325 GHz) bands.
AB - This work reports a concurrent dual-band amplifier with an extensive spacing between the two bands by adopting a proposed dual-frequency maximum achievable gain (Gmax) core with dual-band matching. The proposed dual-frequency Gmax-core can expand the difference between the two target frequencies by focusing on satisfying dominant gain-boosting condition and adopting a linear, lossy, and reciprocal-based design approach. Implemented in a 65-nm complementary metal-oxide-semiconductor (CMOS) process, a five-stage dual-band amplifier shows a peak power gain of 23.6 and 13.7 dB, 3 dB bandwidth of 5 and 17 GHz, saturated output power (Psat) of -1.2 and -2.2 dBm, and peak power-added efficiency of 2.1 and 1.5 % at 201 and 283 GHz, respectively, while consuming a dc power of 34.5 mW. The proposed amplifier is the first demonstration of the concurrent dual-band amplifier operating at G- (140-220 GHz) and H- (220-325 GHz) bands.
KW - Amplifier
KW - complementary metal-oxide-semiconductor (CMOS)
KW - dual-band
KW - dual-frequency
KW - gain-boosting
KW - maximum achievable gain (G)
KW - multiband
KW - terahertz
UR - http://www.scopus.com/inward/record.url?scp=85153361372&partnerID=8YFLogxK
U2 - 10.1109/TTHZ.2023.3263644
DO - 10.1109/TTHZ.2023.3263644
M3 - Article
AN - SCOPUS:85153361372
SN - 2156-342X
VL - 13
SP - 221
EP - 230
JO - IEEE Transactions on Terahertz Science and Technology
JF - IEEE Transactions on Terahertz Science and Technology
IS - 3
ER -