Abstract
This work reports a concurrent dual-band amplifier with an extensive spacing between the two bands by adopting a proposed dual-frequency maximum achievable gain (Gmax) core with dual-band matching. The proposed dual-frequency Gmax-core can expand the difference between the two target frequencies by focusing on satisfying dominant gain-boosting condition and adopting a linear, lossy, and reciprocal-based design approach. Implemented in a 65-nm complementary metal-oxide-semiconductor (CMOS) process, a five-stage dual-band amplifier shows a peak power gain of 23.6 and 13.7 dB, 3 dB bandwidth of 5 and 17 GHz, saturated output power (Psat) of -1.2 and -2.2 dBm, and peak power-added efficiency of 2.1 and 1.5 % at 201 and 283 GHz, respectively, while consuming a dc power of 34.5 mW. The proposed amplifier is the first demonstration of the concurrent dual-band amplifier operating at G- (140-220 GHz) and H- (220-325 GHz) bands.
| Original language | English |
|---|---|
| Pages (from-to) | 221-230 |
| Number of pages | 10 |
| Journal | IEEE Transactions on Terahertz Science and Technology |
| Volume | 13 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1 May 2023 |
Keywords
- Amplifier
- complementary metal-oxide-semiconductor (CMOS)
- dual-band
- dual-frequency
- gain-boosting
- maximum achievable gain (G)
- multiband
- terahertz