TY - GEN
T1 - A 230-260GHz wideband amplifier in 65nm CMOS based on dual-peak Gmax-core
AU - Park, Dae Woong
AU - Utomo, Dzuhri Radityo
AU - Hong, Jong Phil
AU - Lee, Sang Gug
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/2/20
Y1 - 2018/2/20
N2 - A dual-peak maximum achievable gain core design technique is proposed. It has been adopted into a 4-stage wideband amplifier. Implemented in a 65nm CMOS, the amplifier achieves 3dB bandwidth of 30GHz (230∼260GHz), gain of 12.4±1.5dB, and peak PAE of 1.6% while dissipating 23.8mW, which corresponds to the widest bandwidth and highest gain per stage among other reported CMOS amplifiers operating above 200GHz.
AB - A dual-peak maximum achievable gain core design technique is proposed. It has been adopted into a 4-stage wideband amplifier. Implemented in a 65nm CMOS, the amplifier achieves 3dB bandwidth of 30GHz (230∼260GHz), gain of 12.4±1.5dB, and peak PAE of 1.6% while dissipating 23.8mW, which corresponds to the widest bandwidth and highest gain per stage among other reported CMOS amplifiers operating above 200GHz.
UR - https://www.scopus.com/pages/publications/85045333883
U2 - 10.1109/ASPDAC.2018.8297330
DO - 10.1109/ASPDAC.2018.8297330
M3 - Conference contribution
AN - SCOPUS:85045333883
T3 - Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC
SP - 301
EP - 302
BT - ASP-DAC 2018 - 23rd Asia and South Pacific Design Automation Conference, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 23rd Asia and South Pacific Design Automation Conference, ASP-DAC 2018
Y2 - 22 January 2018 through 25 January 2018
ER -