A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique

Dae Woong Park; Dzuhri Radityo Utomo; Jong Phil Hong; Kristof Vaesen; Piet Wambacq; Sang Gug Lee

doi:10.1109/VLSICircuits18222.2020.9162862

A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G_max Gain Boosting Technique

Dae Woong Park, Dzuhri Radityo Utomo, Jong Phil Hong, Kristof Vaesen, Piet Wambacq, Sang Gug Lee

Dept. of Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

This work proposes the concept of double-G_max (G_max : maximum achievable gain) core based regenerative amplifier which, in principle, breaks the gain barrier of G_max (the highest gain that can be obtained from a single transistor) at the frequencies below the maximum oscillation frequency of the transistor. Regenerative amplifiers adopting the proposed double-G_max core are implemented in a 65 nm CMOS technology and measurements show the peak gain of 18 and 15 dB, 9 and 7.5 dB per stage, at 247 and 272 GHz, respectively.

Original language	English
Title of host publication	2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728199429
DOIs	https://doi.org/10.1109/VLSICircuits18222.2020.9162862
State	Published - Jun 2020
Event	2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Honolulu, United States Duration: 16 Jun 2020 → 19 Jun 2020

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume	2020-June

Conference

Conference	2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020
Country/Territory	United States
City	Honolulu
Period	16/06/20 → 19/06/20

Keywords

amplifier
CMOS
double-G

Access to Document

10.1109/VLSICircuits18222.2020.9162862

Cite this

Park, D. W., Utomo, D. R., Hong, J. P., Vaesen, K., Wambacq, P., & Lee, S. G. (2020). A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G_max Gain Boosting Technique. In 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings Article 9162862 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSICircuits18222.2020.9162862

Park, Dae Woong ; Utomo, Dzuhri Radityo ; Hong, Jong Phil et al. / A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G_max Gain Boosting Technique. 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

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title = "A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique",

abstract = "This work proposes the concept of double-Gmax (Gmax : maximum achievable gain) core based regenerative amplifier which, in principle, breaks the gain barrier of Gmax (the highest gain that can be obtained from a single transistor) at the frequencies below the maximum oscillation frequency of the transistor. Regenerative amplifiers adopting the proposed double-Gmax core are implemented in a 65 nm CMOS technology and measurements show the peak gain of 18 and 15 dB, 9 and 7.5 dB per stage, at 247 and 272 GHz, respectively.",

keywords = "amplifier, CMOS, double-G",

author = "Park, \{Dae Woong\} and Utomo, \{Dzuhri Radityo\} and Hong, \{Jong Phil\} and Kristof Vaesen and Piet Wambacq and Lee, \{Sang Gug\}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 ; Conference date: 16-06-2020 Through 19-06-2020",

year = "2020",

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doi = "10.1109/VLSICircuits18222.2020.9162862",

language = "English",

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Park, DW, Utomo, DR, Hong, JP, Vaesen, K, Wambacq, P & Lee, SG 2020, A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G_max Gain Boosting Technique. in 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings., 9162862, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, vol. 2020-June, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, United States, 16/06/20. https://doi.org/10.1109/VLSICircuits18222.2020.9162862

A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G_max Gain Boosting Technique. / Park, Dae Woong; Utomo, Dzuhri Radityo; Hong, Jong Phil et al.
2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9162862 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2020-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - This work proposes the concept of double-Gmax (Gmax : maximum achievable gain) core based regenerative amplifier which, in principle, breaks the gain barrier of Gmax (the highest gain that can be obtained from a single transistor) at the frequencies below the maximum oscillation frequency of the transistor. Regenerative amplifiers adopting the proposed double-Gmax core are implemented in a 65 nm CMOS technology and measurements show the peak gain of 18 and 15 dB, 9 and 7.5 dB per stage, at 247 and 272 GHz, respectively.

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Park DW, Utomo DR, Hong JP, Vaesen K, Wambacq P, Lee SG. A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G_max Gain Boosting Technique. In 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9162862. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). doi: 10.1109/VLSICircuits18222.2020.9162862