TY - JOUR
T1 - A 250-GHz 12.6-dB Gain and 3.8-dBm PsatPower Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based Gmax-Core
AU - Yun, Byeonghun
AU - Park, Dae Woong
AU - Choi, Won Jong
AU - Usman Mahmood, Hafiz
AU - Lee, Sang Gug
N1 - Publisher Copyright:
© 2001-2012 IEEE.
PY - 2021/3
Y1 - 2021/3
N2 - This letter proposes a high output power 250-GHz power amplifier adopting dual-shunt elements in the implementation of maximum achievable gain (Gmax) core. By the adoption of the dual-shunt-element-based Gmax-core, the output transistor size can be increased, which leads to higher output power. Implemented in a 65-nm CMOS, the measurement results show a peak gain of 12.6 dB, Psat of 3/3.8 dBm, OP1 dB of 1.4/2.3 dBm, and peak power-added efficiency (PAE) of 4.8/3.2% at 248.6 GHz while dissipating 40/62.4 mW from a 1/1.2-V supply, respectively.
AB - This letter proposes a high output power 250-GHz power amplifier adopting dual-shunt elements in the implementation of maximum achievable gain (Gmax) core. By the adoption of the dual-shunt-element-based Gmax-core, the output transistor size can be increased, which leads to higher output power. Implemented in a 65-nm CMOS, the measurement results show a peak gain of 12.6 dB, Psat of 3/3.8 dBm, OP1 dB of 1.4/2.3 dBm, and peak power-added efficiency (PAE) of 4.8/3.2% at 248.6 GHz while dissipating 40/62.4 mW from a 1/1.2-V supply, respectively.
KW - CMOS
KW - H-band
KW - maximum achievable gain (Gmax)
KW - power amplifier (PA)
UR - http://www.scopus.com/inward/record.url?scp=85099604668&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2020.3046745
DO - 10.1109/LMWC.2020.3046745
M3 - Article
AN - SCOPUS:85099604668
SN - 1531-1309
VL - 31
SP - 292
EP - 295
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 3
M1 - 9319005
ER -