A 250-GHz 12.6-dB Gain and 3.8-dBm PsatPower Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based Gmax-Core

Byeonghun Yun; Dae Woong Park; Won Jong Choi; Hafiz Usman Mahmood; Sang Gug Lee

doi:10.1109/LMWC.2020.3046745

A 250-GHz 12.6-dB Gain and 3.8-dBm P_satPower Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G_max-Core

Byeonghun Yun
, Dae Woong Park
, Won Jong Choi
, Hafiz Usman Mahmood
, Sang Gug Lee

Dept. of Semiconductor Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

This letter proposes a high output power 250-GHz power amplifier adopting dual-shunt elements in the implementation of maximum achievable gain (Gmax) core. By the adoption of the dual-shunt-element-based Gmax-core, the output transistor size can be increased, which leads to higher output power. Implemented in a 65-nm CMOS, the measurement results show a peak gain of 12.6 dB, Psat of 3/3.8 dBm, OP1 dB of 1.4/2.3 dBm, and peak power-added efficiency (PAE) of 4.8/3.2% at 248.6 GHz while dissipating 40/62.4 mW from a 1/1.2-V supply, respectively.

Original language	English
Article number	9319005
Pages (from-to)	292-295
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1109/LMWC.2020.3046745
State	Published - Mar 2021

Keywords

CMOS
H-band
maximum achievable gain (Gmax)
power amplifier (PA)

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10.1109/LMWC.2020.3046745

Cite this

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title = "A 250-GHz 12.6-dB Gain and 3.8-dBm PsatPower Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based Gmax-Core",

abstract = "This letter proposes a high output power 250-GHz power amplifier adopting dual-shunt elements in the implementation of maximum achievable gain (Gmax) core. By the adoption of the dual-shunt-element-based Gmax-core, the output transistor size can be increased, which leads to higher output power. Implemented in a 65-nm CMOS, the measurement results show a peak gain of 12.6 dB, Psat of 3/3.8 dBm, OP1 dB of 1.4/2.3 dBm, and peak power-added efficiency (PAE) of 4.8/3.2\% at 248.6 GHz while dissipating 40/62.4 mW from a 1/1.2-V supply, respectively.",

keywords = "CMOS, H-band, maximum achievable gain (Gmax), power amplifier (PA)",

author = "Byeonghun Yun and Park, \{Dae Woong\} and Choi, \{Won Jong\} and \{Usman Mahmood\}, Hafiz and Lee, \{Sang Gug\}",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2021",

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doi = "10.1109/LMWC.2020.3046745",

language = "English",

volume = "31",

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journal = "IEEE Microwave and Wireless Components Letters",

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T1 - A 250-GHz 12.6-dB Gain and 3.8-dBm PsatPower Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based Gmax-Core

AU - Yun, Byeonghun

AU - Park, Dae Woong

AU - Choi, Won Jong

AU - Usman Mahmood, Hafiz

AU - Lee, Sang Gug

PY - 2021/3

Y1 - 2021/3

N2 - This letter proposes a high output power 250-GHz power amplifier adopting dual-shunt elements in the implementation of maximum achievable gain (Gmax) core. By the adoption of the dual-shunt-element-based Gmax-core, the output transistor size can be increased, which leads to higher output power. Implemented in a 65-nm CMOS, the measurement results show a peak gain of 12.6 dB, Psat of 3/3.8 dBm, OP1 dB of 1.4/2.3 dBm, and peak power-added efficiency (PAE) of 4.8/3.2% at 248.6 GHz while dissipating 40/62.4 mW from a 1/1.2-V supply, respectively.

AB - This letter proposes a high output power 250-GHz power amplifier adopting dual-shunt elements in the implementation of maximum achievable gain (Gmax) core. By the adoption of the dual-shunt-element-based Gmax-core, the output transistor size can be increased, which leads to higher output power. Implemented in a 65-nm CMOS, the measurement results show a peak gain of 12.6 dB, Psat of 3/3.8 dBm, OP1 dB of 1.4/2.3 dBm, and peak power-added efficiency (PAE) of 4.8/3.2% at 248.6 GHz while dissipating 40/62.4 mW from a 1/1.2-V supply, respectively.

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KW - H-band

KW - maximum achievable gain (Gmax)

KW - power amplifier (PA)

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DO - 10.1109/LMWC.2020.3046745

M3 - Article

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JF - IEEE Microwave and Wireless Components Letters

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ER -

A 250-GHz 12.6-dB Gain and 3.8-dBm P_satPower Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G_max-Core

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Keywords

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