A 264-GHz, 2.3-dBm Push-Push Transformer-Based Hartley Oscillator

Dzuhri Radityo Utomo, Dae Woong Park, Jong Phil Hong, Sang Gug Lee

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A high-power subterahertz (THz) push-push oscillator topology is proposed. Adopting Hartley oscillator topology with transformer as its resonator, the proposed oscillator reduces the effective parasitic capacitance of transistors; therefore, a larger size transistor can be adopted, which increases the output power while still maintaining the same oscillation frequency. The adoption of the transformer also improves the LC resonator's Q-factor, further improving the output power and dc-to-RF efficiency. Implemented in 65-nm CMOS technology, the measured output power of the proposed single oscillator is 2.3 dBm at 264 GHz with 2.76% dc-to-RF efficiency and-96.8 dBc/Hz of the phase noise at a 10-MHz offset.

Original languageEnglish
Article number9420657
Pages (from-to)893-896
Number of pages4
JournalIEEE Microwave and Wireless Components Letters
Volume31
Issue number7
DOIs
StatePublished - Jul 2021

Keywords

  • CMOS
  • Hartley oscillator
  • high power
  • parasitic capacitance
  • terahertz (THz) source

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