Abstract
A high-power subterahertz (THz) push-push oscillator topology is proposed. Adopting Hartley oscillator topology with transformer as its resonator, the proposed oscillator reduces the effective parasitic capacitance of transistors; therefore, a larger size transistor can be adopted, which increases the output power while still maintaining the same oscillation frequency. The adoption of the transformer also improves the LC resonator's Q-factor, further improving the output power and dc-to-RF efficiency. Implemented in 65-nm CMOS technology, the measured output power of the proposed single oscillator is 2.3 dBm at 264 GHz with 2.76% dc-to-RF efficiency and-96.8 dBc/Hz of the phase noise at a 10-MHz offset.
| Original language | English |
|---|---|
| Article number | 9420657 |
| Pages (from-to) | 893-896 |
| Number of pages | 4 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 31 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 2021 |
Keywords
- CMOS
- Hartley oscillator
- high power
- parasitic capacitance
- terahertz (THz) source
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