TY - JOUR
T1 - A 280-/300-GHz Three-Stage Amplifiers in 65-nm CMOS with 12-/9-dB Gain and 1.6/1.4% PAE while Dissipating 17.9 mW
AU - Park, Dae Woong
AU - Utomo, Dzuhri Radityo
AU - Lam, Bao Huu
AU - Hong, Jong Phil
AU - Lee, Sang Gug
N1 - Publisher Copyright:
© 2001-2012 IEEE.
PY - 2018/1
Y1 - 2018/1
N2 - This letter reports the design of terahertz amplifiers using the concept of maximum achievable gain ( $G-{\mathrm {max}})$ of a transistor embedded in a linear, lossless, reciprocal network. Implemented in a 65-nm CMOS, by adopting the optimized $G-{\mathrm {max}}$ -core, 280- and 300-GHz amplifiers achieve peak gain of 12 and 9 dB, peak power-added efficiency (PAE) of 1.6% and 1.4%, and gain per stage of 4 and 3 dB, respectively, while dissipating 17.9 mW, which is the best performance up to date in terms of operating frequency, gain per stage, and PAE in CMOS process.
AB - This letter reports the design of terahertz amplifiers using the concept of maximum achievable gain ( $G-{\mathrm {max}})$ of a transistor embedded in a linear, lossless, reciprocal network. Implemented in a 65-nm CMOS, by adopting the optimized $G-{\mathrm {max}}$ -core, 280- and 300-GHz amplifiers achieve peak gain of 12 and 9 dB, peak power-added efficiency (PAE) of 1.6% and 1.4%, and gain per stage of 4 and 3 dB, respectively, while dissipating 17.9 mW, which is the best performance up to date in terms of operating frequency, gain per stage, and PAE in CMOS process.
KW - Amplifier
KW - CMOS
KW - Gmax
KW - terahertz.
UR - http://www.scopus.com/inward/record.url?scp=85038409143&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2017.2777106
DO - 10.1109/LMWC.2017.2777106
M3 - Article
AN - SCOPUS:85038409143
SN - 1531-1309
VL - 28
SP - 79
EP - 81
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 1
M1 - 8168414
ER -