@inproceedings{10fcfa05b2134b188861ee152dec5c5a,
title = "A 28GHz-band integrated GaAs Power Amplifier for 5G Mobile Communications",
abstract = "This paper describes a power amplifier(PA) that performs around 28 GHz for fifth generation mobile networks (5G) using 0.15-μ m E-mode GaAs pseudomorphic high electron mobility transistor (pHEMT) devices. The power amplifier with three-stage common-source architecture achieved a small signal gain of 16.7 dB, the output 1-dB compression power (OP1dB) of 22.8 dBm, and the power added efficiency at peak power of 20.5\% at 28 GHz under 3-V supply voltage. At 27GHz the small signal gain is 18 dB, the OP1dB is 21.7 dBm, and the poweradded efficiency at peak power is 16.3\% under 3-V supply voltage.",
keywords = "5G mobile communications, mm-Wave, power amplifiers",
author = "Bonghyuk Park and Lee, \{Hui Dong\} and Seunghyun Jang and Sunwoo Kong and Seunghun Wang and Hyun, \{Seok Bong\}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 19th International System-on-Chip Design Conference, ISOCC 2022 ; Conference date: 19-10-2022 Through 22-10-2022",
year = "2022",
doi = "10.1109/ISOCC56007.2022.10031407",
language = "English",
series = "Proceedings - International SoC Design Conference 2022, ISOCC 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "376--377",
booktitle = "Proceedings - International SoC Design Conference 2022, ISOCC 2022",
}