Abstract
A highly efficient rectifier for wireless power transfer in biomedical implant applications is implemented using 0.18-μm CMOS technology. The proposed rectifier with active nMOS and pMOS diodes employs a four-input common-gate-type capacitively cross-coupled latched comparator to control the reverse leakage current in order to maximize the power conversion efficiency (PCE) of the rectifier. The designed rectifier achieves a maximum measured PCE of 81.9% at 13.56 MHz under conditions of a low 1.5-Vpp RF input signal with a 1- kΩ output load resistance and occupies 0.009 mm 2 of core die area.
Original language | English |
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Article number | 6205613 |
Pages (from-to) | 409-413 |
Number of pages | 5 |
Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
Volume | 59 |
Issue number | 7 |
DOIs | |
State | Published - 2012 |
Keywords
- Biomedical implant devices
- CMOS rectifier
- cross-coupled latched comparator
- wireless power transfer