A CMOS rectifier with a cross-coupled latched comparator for wireless power transfer in biomedical applications

Hyouk Kyu Cha; Woo Tae Park; Minkyu Je

doi:10.1109/TCSII.2012.2198977

A CMOS rectifier with a cross-coupled latched comparator for wireless power transfer in biomedical applications

Hyouk Kyu Cha, Woo Tae Park, Minkyu Je

Agency for Science, Technology and Research, Singapore

Research output: Contribution to journal › Article › peer-review

128 Scopus citations

Abstract

A highly efficient rectifier for wireless power transfer in biomedical implant applications is implemented using 0.18-μm CMOS technology. The proposed rectifier with active nMOS and pMOS diodes employs a four-input common-gate-type capacitively cross-coupled latched comparator to control the reverse leakage current in order to maximize the power conversion efficiency (PCE) of the rectifier. The designed rectifier achieves a maximum measured PCE of 81.9% at 13.56 MHz under conditions of a low 1.5-V_pp RF input signal with a 1- kΩ output load resistance and occupies 0.009 mm ² of core die area.

Original language	English
Article number	6205613
Pages (from-to)	409-413
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	59
Issue number	7
DOIs	https://doi.org/10.1109/TCSII.2012.2198977
State	Published - 2012

Keywords

Biomedical implant devices
CMOS rectifier
cross-coupled latched comparator
wireless power transfer

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10.1109/TCSII.2012.2198977

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title = "A CMOS rectifier with a cross-coupled latched comparator for wireless power transfer in biomedical applications",

abstract = "A highly efficient rectifier for wireless power transfer in biomedical implant applications is implemented using 0.18-μm CMOS technology. The proposed rectifier with active nMOS and pMOS diodes employs a four-input common-gate-type capacitively cross-coupled latched comparator to control the reverse leakage current in order to maximize the power conversion efficiency (PCE) of the rectifier. The designed rectifier achieves a maximum measured PCE of 81.9\% at 13.56 MHz under conditions of a low 1.5-Vpp RF input signal with a 1- kΩ output load resistance and occupies 0.009 mm 2 of core die area.",

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AU - Cha, Hyouk Kyu

AU - Park, Woo Tae

AU - Je, Minkyu

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N2 - A highly efficient rectifier for wireless power transfer in biomedical implant applications is implemented using 0.18-μm CMOS technology. The proposed rectifier with active nMOS and pMOS diodes employs a four-input common-gate-type capacitively cross-coupled latched comparator to control the reverse leakage current in order to maximize the power conversion efficiency (PCE) of the rectifier. The designed rectifier achieves a maximum measured PCE of 81.9% at 13.56 MHz under conditions of a low 1.5-Vpp RF input signal with a 1- kΩ output load resistance and occupies 0.009 mm 2 of core die area.

AB - A highly efficient rectifier for wireless power transfer in biomedical implant applications is implemented using 0.18-μm CMOS technology. The proposed rectifier with active nMOS and pMOS diodes employs a four-input common-gate-type capacitively cross-coupled latched comparator to control the reverse leakage current in order to maximize the power conversion efficiency (PCE) of the rectifier. The designed rectifier achieves a maximum measured PCE of 81.9% at 13.56 MHz under conditions of a low 1.5-Vpp RF input signal with a 1- kΩ output load resistance and occupies 0.009 mm 2 of core die area.

KW - Biomedical implant devices

KW - CMOS rectifier

KW - cross-coupled latched comparator

KW - wireless power transfer

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JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

IS - 7

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ER -

A CMOS rectifier with a cross-coupled latched comparator for wireless power transfer in biomedical applications

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