A compact 30-W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 W/mm at 8 GHz

Min Seong Lee; Donghwan Kim; Sukeun Eom; Ho Young Cha; Kwang Seok Seo

doi:10.1109/LED.2014.2343233

A compact 30-W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 W/mm at 8 GHz

Min Seong Lee, Donghwan Kim, Sukeun Eom, Ho Young Cha, Kwang Seok Seo

Dept. of Mechanical System and Design Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility transistor (HEMT) with 3.6-mm gate periphery provides 29.4-W output power and 8-dB small signal gain at 8 GHz with power added efficiency of 39.4% under pulse condition at a duty of 10% with a pulsewidth 100 ?s. Load-pull measurement at 8 GHz demonstrates an output power density of 8.1 W/mm. To the best of our knowledge, the presented amplifier exhibits the highest power density, delivering >10 W of output power in X-band for GaN HEMTs technology on silicon substrate.

Original language	English
Article number	6879300
Pages (from-to)	995-997
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	10
DOIs	https://doi.org/10.1109/LED.2014.2343233
State	Published - 1 Oct 2014

Keywords

Algan/gan-on-si
Amplifier
Pae
Power density
X-band

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10.1109/LED.2014.2343233

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title = "A compact 30-W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 W/mm at 8 GHz",

abstract = "A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility transistor (HEMT) with 3.6-mm gate periphery provides 29.4-W output power and 8-dB small signal gain at 8 GHz with power added efficiency of 39.4\% under pulse condition at a duty of 10\% with a pulsewidth 100 ?s. Load-pull measurement at 8 GHz demonstrates an output power density of 8.1 W/mm. To the best of our knowledge, the presented amplifier exhibits the highest power density, delivering >10 W of output power in X-band for GaN HEMTs technology on silicon substrate.",

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T1 - A compact 30-W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 W/mm at 8 GHz

AU - Lee, Min Seong

AU - Kim, Donghwan

AU - Eom, Sukeun

AU - Cha, Ho Young

AU - Seo, Kwang Seok

PY - 2014/10/1

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N2 - A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility transistor (HEMT) with 3.6-mm gate periphery provides 29.4-W output power and 8-dB small signal gain at 8 GHz with power added efficiency of 39.4% under pulse condition at a duty of 10% with a pulsewidth 100 ?s. Load-pull measurement at 8 GHz demonstrates an output power density of 8.1 W/mm. To the best of our knowledge, the presented amplifier exhibits the highest power density, delivering >10 W of output power in X-band for GaN HEMTs technology on silicon substrate.

AB - A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility transistor (HEMT) with 3.6-mm gate periphery provides 29.4-W output power and 8-dB small signal gain at 8 GHz with power added efficiency of 39.4% under pulse condition at a duty of 10% with a pulsewidth 100 ?s. Load-pull measurement at 8 GHz demonstrates an output power density of 8.1 W/mm. To the best of our knowledge, the presented amplifier exhibits the highest power density, delivering >10 W of output power in X-band for GaN HEMTs technology on silicon substrate.

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A compact 30-W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 W/mm at 8 GHz

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Keywords

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