A D-Band Swing Boosting Power Detector with 25-KV/W Intrinsic Responsivity and 2.1-pW/Hz. NEP in 22-nm CMOS FDSOI

Boce Lin; Kyung Sik Choi; Hua Wang

doi:10.1109/LMWT.2024.3368622

A D-Band Swing Boosting Power Detector with 25-KV/W Intrinsic Responsivity and 2.1-pW/Hz. NEP in 22-nm CMOS FDSOI

Boce Lin, Kyung Sik Choi, Hua Wang

Electronic Engineering Program

Research output: Contribution to journal › Article › peer-review

Abstract

A D -band swing-boosting CMOS power detector (PD) is proposed and implemented in 22-nm CMOS FDSOI technology. Using transistor parasitics and an added source inductor, the proposed design can achieve 6.5 times swing boosting compared to the traditional PD designs. The measured responsivity and noise equivalent power (NEP) is 25 KV/W and 2.1 pW/Hz0.5, respectively. Compared to the state of the art, the proposed PD provides the highest responsivity for CMOS PD at the D -band.

Original language	English
Pages (from-to)	497-500
Number of pages	4
Journal	IEEE Microwave and Wireless Technology Letters
Volume	34
Issue number	5
DOIs	https://doi.org/10.1109/LMWT.2024.3368622
State	Published - 1 May 2024

Keywords

D-band
MOSFET power detector (PD)
receiver
wireless sensing

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10.1109/LMWT.2024.3368622

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title = "A D-Band Swing Boosting Power Detector with 25-KV/W Intrinsic Responsivity and 2.1-pW/Hz. NEP in 22-nm CMOS FDSOI",

abstract = "A D -band swing-boosting CMOS power detector (PD) is proposed and implemented in 22-nm CMOS FDSOI technology. Using transistor parasitics and an added source inductor, the proposed design can achieve 6.5 times swing boosting compared to the traditional PD designs. The measured responsivity and noise equivalent power (NEP) is 25 KV/W and 2.1 pW/Hz0.5, respectively. Compared to the state of the art, the proposed PD provides the highest responsivity for CMOS PD at the D -band.",

keywords = "D-band, MOSFET power detector (PD), receiver, wireless sensing",

author = "Boce Lin and Choi, \{Kyung Sik\} and Hua Wang",

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AU - Choi, Kyung Sik

AU - Wang, Hua

PY - 2024/5/1

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N2 - A D -band swing-boosting CMOS power detector (PD) is proposed and implemented in 22-nm CMOS FDSOI technology. Using transistor parasitics and an added source inductor, the proposed design can achieve 6.5 times swing boosting compared to the traditional PD designs. The measured responsivity and noise equivalent power (NEP) is 25 KV/W and 2.1 pW/Hz0.5, respectively. Compared to the state of the art, the proposed PD provides the highest responsivity for CMOS PD at the D -band.

AB - A D -band swing-boosting CMOS power detector (PD) is proposed and implemented in 22-nm CMOS FDSOI technology. Using transistor parasitics and an added source inductor, the proposed design can achieve 6.5 times swing boosting compared to the traditional PD designs. The measured responsivity and noise equivalent power (NEP) is 25 KV/W and 2.1 pW/Hz0.5, respectively. Compared to the state of the art, the proposed PD provides the highest responsivity for CMOS PD at the D -band.

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KW - MOSFET power detector (PD)

KW - receiver

KW - wireless sensing

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JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

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A D-Band Swing Boosting Power Detector with 25-KV/W Intrinsic Responsivity and 2.1-pW/Hz. NEP in 22-nm CMOS FDSOI

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Keywords

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