Abstract
This article presents a high-gain and wideband D-band low-noise amplifier (LNA) adopting a proposed wideband pseudo-simultaneous noise-and input-matched (p-SNIM) dual-peak (DP) maximum achievable gain (Gmax)-core. For a transmission line (TL)-based DP Gmax-core, the p-SNIM condition is satisfied by adjusting the stability factor (Kf) without requiring additional components. Comprehensive analysis of the DP Gmax-core is performed to investigate the unique behaviors of input admittance for simultaneous conjugate matching (Yin∗) and optimal admittance for minimum noise figure (NF) (Ynopt) as a function of Kf, which is fully exploited to implement the wideband p-SNIM DP Gmax-core. Moreover, we present the design procedure of a proposed dual-frequency inter-stage matching network that enables the wideband multistage LNA implementation. Implemented in a 40-nm CMOS technology, the D-band three-stage LNA achieves a peak power gain of 16.3 dB, a 3-dB bandwidth of 24 GHz, and a minimum NF of 4.9 dB while dissipating only 16.1 mW.
| Original language | English |
|---|---|
| Pages (from-to) | 3260-3273 |
| Number of pages | 14 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 72 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 May 2024 |
Keywords
- Amplifier
- CMOS
- Gmax
- Gmax-core
- dual-peak (DP)
- low-noise amplifier (LNA)
- noise matching
- sub-THz