Abstract
In this paper, a new low-voltage ringing zero voltage transition (ZVT) cell is proposed for a family of non-isolated dc-dc converters. In the proposed converter, all semiconductor devices operate under soft-switching condition at both turning on and off. The proposed ZVT cell resolves the issues appeared in the previous works: no online calculation required to achieve ZVS turn-on of the main switch; no extra voltage stress imposed on the main or snubber components; no floating gate driver required for the main and snubber switches; low component count of the ZVT cell; operation principles and design guideline of the boost converter with the proposed ZVT cell are presented. Also, three different positions of a snubber diode considering its junction capacitor are analyzed to clarify the advantage of the proposed ZVT cell. A 2-kW laboratory prototype of the boost converter with the proposed ZVT cell operating at 100 kHz is built and tested to verify the theoretical analysis. Finally, a comparative analysis is given to demonstrate the superiority of the proposed converter.
| Original language | English |
|---|---|
| Article number | 8691486 |
| Pages (from-to) | 59-69 |
| Number of pages | 11 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 35 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2020 |
Keywords
- Active snubber
- DC-DC converter
- junction capacitor
- zero voltage switching (ZVS)
- zero voltage transition (ZVT)