A fully-integrated high-voltage generation IC for implantable medical devices

This work presents the design of a fully-integrated high-voltage charge pump IC for implantable medical devices using 0.18-µm CMOS process. The implemented charge pump IC is used to generate high-voltage DC supply of around 12.8 V for the neural stimulator circuit using 3.2-V input voltage with on-chip pumping and load capacitors. The proposed hybrid charge pump IC is comprised of a feed-forward high-efficiency capacitive pumping path and an input voltage modulated feedback regulation path to maintain the output voltage with varying load current of up to 300 µA. The proposed IC achieves around 46% power efficiency at maximum current load condition.