A Fully Si-Compatible Ni/Si3 N4 /Al2 O3 /p+ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications
- Yeji Lee
- , Soomin Kim
- , Seongmin Kim
- , Wonbo Shim
- , Sungjun Kim
- , Seongjae Cho
Research output: Contribution to journal › Article › peer-review