A High-Voltage Generation Charge-Pump IC Using Input Voltage Modulated Regulation for Neural Implant Devices

Alfian Abdi; Hyung Seok Kim; Hyouk Kyu Cha

doi:10.1109/TCSII.2018.2852360

A High-Voltage Generation Charge-Pump IC Using Input Voltage Modulated Regulation for Neural Implant Devices

Alfian Abdi, Hyung Seok Kim, Hyouk Kyu Cha

Dept. of Electrical and Information Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

This brief presents a high-voltage generation charge pump integrated circuit (IC) with a novel regulation scheme for neural stimulation applications. Instead of using a widely used pulse frequency modulation approach with a variable clock frequency for regulation, an input voltage modulated regulation with a low drop-out regulator at the input of the feedforward path is used to maintain the charge pump output voltage with varying load current between μA to 1 mA. The proposed charge pump IC, implemented with 0.18- μm standard low-voltage CMOS process, reliably generates 12.8-V output voltage from a 2.8-V input and achieves more than 80% power efficiency at 1 mA load condition. The proposed IC occupies 0.6 mm² of core die area.

Original language	English
Article number	8402136
Pages (from-to)	342-346
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	66
Issue number	3
DOIs	https://doi.org/10.1109/TCSII.2018.2852360
State	Published - Mar 2019

Keywords

charge pump
High-voltage generator
low dropout regulator
neural implant devices
voltage regulation

Access to Document

10.1109/TCSII.2018.2852360

Cite this

@article{d4230b83b45d41da8bc0c572a7417105,

title = "A High-Voltage Generation Charge-Pump IC Using Input Voltage Modulated Regulation for Neural Implant Devices",

abstract = "This brief presents a high-voltage generation charge pump integrated circuit (IC) with a novel regulation scheme for neural stimulation applications. Instead of using a widely used pulse frequency modulation approach with a variable clock frequency for regulation, an input voltage modulated regulation with a low drop-out regulator at the input of the feedforward path is used to maintain the charge pump output voltage with varying load current between μA to 1 mA. The proposed charge pump IC, implemented with 0.18- μm standard low-voltage CMOS process, reliably generates 12.8-V output voltage from a 2.8-V input and achieves more than 80\% power efficiency at 1 mA load condition. The proposed IC occupies 0.6 mm2 of core die area.",

keywords = "charge pump, High-voltage generator, low dropout regulator, neural implant devices, voltage regulation",

author = "Alfian Abdi and Kim, \{Hyung Seok\} and Cha, \{Hyouk Kyu\}",

note = "Publisher Copyright: {\textcopyright} 2004-2012 IEEE.",

year = "2019",

month = mar,

doi = "10.1109/TCSII.2018.2852360",

language = "English",

volume = "66",

pages = "342--346",

journal = "IEEE Transactions on Circuits and Systems II: Express Briefs",

issn = "1549-7747",

number = "3",

}

TY - JOUR

T1 - A High-Voltage Generation Charge-Pump IC Using Input Voltage Modulated Regulation for Neural Implant Devices

AU - Abdi, Alfian

AU - Kim, Hyung Seok

AU - Cha, Hyouk Kyu

PY - 2019/3

Y1 - 2019/3

N2 - This brief presents a high-voltage generation charge pump integrated circuit (IC) with a novel regulation scheme for neural stimulation applications. Instead of using a widely used pulse frequency modulation approach with a variable clock frequency for regulation, an input voltage modulated regulation with a low drop-out regulator at the input of the feedforward path is used to maintain the charge pump output voltage with varying load current between μA to 1 mA. The proposed charge pump IC, implemented with 0.18- μm standard low-voltage CMOS process, reliably generates 12.8-V output voltage from a 2.8-V input and achieves more than 80% power efficiency at 1 mA load condition. The proposed IC occupies 0.6 mm2 of core die area.

AB - This brief presents a high-voltage generation charge pump integrated circuit (IC) with a novel regulation scheme for neural stimulation applications. Instead of using a widely used pulse frequency modulation approach with a variable clock frequency for regulation, an input voltage modulated regulation with a low drop-out regulator at the input of the feedforward path is used to maintain the charge pump output voltage with varying load current between μA to 1 mA. The proposed charge pump IC, implemented with 0.18- μm standard low-voltage CMOS process, reliably generates 12.8-V output voltage from a 2.8-V input and achieves more than 80% power efficiency at 1 mA load condition. The proposed IC occupies 0.6 mm2 of core die area.

KW - charge pump

KW - High-voltage generator

KW - low dropout regulator

KW - neural implant devices

KW - voltage regulation

UR - https://www.scopus.com/pages/publications/85049421129

U2 - 10.1109/TCSII.2018.2852360

DO - 10.1109/TCSII.2018.2852360

M3 - Article

AN - SCOPUS:85049421129

SN - 1549-7747

VL - 66

SP - 342

EP - 346

JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

IS - 3

M1 - 8402136

ER -

A High-Voltage Generation Charge-Pump IC Using Input Voltage Modulated Regulation for Neural Implant Devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this