A highly-integrated low-noise MICS band receiver RF front-end IC with AC-Coupled current mirror amplifier

Hyouk Kyu Cha

doi:10.1142/S0218126619500105

A highly-integrated low-noise MICS band receiver RF front-end IC with AC-Coupled current mirror amplifier

Hyouk Kyu Cha

Dept. of Electrical and Information Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This work presents a low-noise, low-power receiver RF front-end integrated circuit (IC) for 402-405MHz medical implant communications service (MICS) band applications using 0.18-μm CMOS process. The proposed front-end employs an AC-coupled current mirroring amplifier in between the low-noise current-reuse transconductor amplifier and a single-balanced IQ mixer for improved gain and noise performance in comparison to previous works. The designed front-end IC achieves a simulated performance of 36.5dB conversion gain, 1.85dB noise figure, and IIP3 of -30dBm while consuming 440μW from 1-V voltage supply. The consumed core layout area, including I/Q LO generation and current bias circuits, is only 0.29mm².

Original language	English
Article number	1950010
Journal	Journal of Circuits, Systems and Computers
Volume	28
Issue number	1
DOIs	https://doi.org/10.1142/S0218126619500105
State	Published - 1 Jan 2019

Keywords

current mirror amplifier
current-reuse
MICS
RF front-end
wireless receiver

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10.1142/S0218126619500105

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title = "A highly-integrated low-noise MICS band receiver RF front-end IC with AC-Coupled current mirror amplifier",

abstract = "This work presents a low-noise, low-power receiver RF front-end integrated circuit (IC) for 402-405MHz medical implant communications service (MICS) band applications using 0.18-μm CMOS process. The proposed front-end employs an AC-coupled current mirroring amplifier in between the low-noise current-reuse transconductor amplifier and a single-balanced IQ mixer for improved gain and noise performance in comparison to previous works. The designed front-end IC achieves a simulated performance of 36.5dB conversion gain, 1.85dB noise figure, and IIP3 of -30dBm while consuming 440μW from 1-V voltage supply. The consumed core layout area, including I/Q LO generation and current bias circuits, is only 0.29mm2.",

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N2 - This work presents a low-noise, low-power receiver RF front-end integrated circuit (IC) for 402-405MHz medical implant communications service (MICS) band applications using 0.18-μm CMOS process. The proposed front-end employs an AC-coupled current mirroring amplifier in between the low-noise current-reuse transconductor amplifier and a single-balanced IQ mixer for improved gain and noise performance in comparison to previous works. The designed front-end IC achieves a simulated performance of 36.5dB conversion gain, 1.85dB noise figure, and IIP3 of -30dBm while consuming 440μW from 1-V voltage supply. The consumed core layout area, including I/Q LO generation and current bias circuits, is only 0.29mm2.

AB - This work presents a low-noise, low-power receiver RF front-end integrated circuit (IC) for 402-405MHz medical implant communications service (MICS) band applications using 0.18-μm CMOS process. The proposed front-end employs an AC-coupled current mirroring amplifier in between the low-noise current-reuse transconductor amplifier and a single-balanced IQ mixer for improved gain and noise performance in comparison to previous works. The designed front-end IC achieves a simulated performance of 36.5dB conversion gain, 1.85dB noise figure, and IIP3 of -30dBm while consuming 440μW from 1-V voltage supply. The consumed core layout area, including I/Q LO generation and current bias circuits, is only 0.29mm2.

KW - current mirror amplifier

KW - current-reuse

KW - MICS

KW - RF front-end

KW - wireless receiver

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ER -

A highly-integrated low-noise MICS band receiver RF front-end IC with AC-Coupled current mirror amplifier

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Keywords

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