@inproceedings{0418c5dd4b6745fd8d45540751291d69,
title = "A Ku-band Cascode Low Noise Amplifier using InGaAs E-mode 0.15-um pHEMT Technology",
abstract = "Low-power operation and ease of system integration are increasingly important in a system using multiple amplifiers in parallel, such as a phased array. In this paper, a Kuband pseudomorphic high electron mobility transister (pHEMT) low-noise amplifier (LNA) that can be applied to such a system was designed and measured. The chip was fabricated using InGaAs Enhanced-mode (E-mode) 0.15-um pHEMT process. And by applying a cascode configuration that reuses current to the circuit, it consumes low power and has high gain. The current consumption is 5mA at 4V supply voltage, and the gain is 21.3 dB at 16 GHz. The 3-dB bandwidth of the LNA is 2.59 GHz and noise Figure (NF) is 1.46 dB at 16 GHz. OP1dB is 8.05 dBm and IP1dB is -10.8 dBm. The size of the entire chip including the electrostatic discharge (ESD) protection pad is 1.5x0.95 mm2.",
keywords = "InGaAs, Low noise amplifier, pHEMT",
author = "Sunwoo Kong and Seunghun Wang and Lee, \{Hui Dong\} and Park, \{Bong Hyuk\} and Seunghyun Jang and Hyun, \{Seok Bong\}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 14th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2022 ; Conference date: 18-05-2022 Through 20-05-2022",
year = "2022",
doi = "10.1109/GSMM53818.2022.9792325",
language = "English",
series = "GSMM 2022 - 14th Global Symposium on Millimeter-Waves and Terahertz",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "32--34",
booktitle = "GSMM 2022 - 14th Global Symposium on Millimeter-Waves and Terahertz",
}