@inproceedings{6d637c57c75a400385be8a91d8c38fa5,
title = "A mass-production compatible capacitor technology for DRAMs with design rule down to 20 nm",
abstract = "TiO2 and Al-doped TiO2 (ATO) films were studied as the capacitor dielectrics for the dynamic random access memory devices with the design rule of < 40 nm. These materials grown on the variously processed Ru electrode showed a very promising electrical performances; a minimum equivalent oxide thickness of 0.48 nm with the safe leakage current density. The crystal structure, role of the interface with the Ru electrode on the phase formation of TiO2, TiO2 process conditions for achieving the optimized film property, Al-doping effect, plasma-process for the TiO2 and ATO film and the adoption of Ru/TiN double layer electrode for the mass-production compatibility are dealt with in this article. The crucial influence of the precursor (RuO4) for the Ru electrode deposition is also described.",
author = "Choi, \{Gyu Jin\} and Kim, \{Seong Keun\} and Han, \{Jeong Hwan\} and Lee, \{Sang Woon\} and Hwang, \{Cheol Seong\}",
year = "2009",
doi = "10.1149/1.3122121",
language = "English",
isbn = "9781566777100",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "625--648",
booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10",
edition = "2",
note = "International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",
}