A physical model of switching dynamics in tantalum oxide memristive devices

Patrick R. Mickel; Andrew J. Lohn; Byung Joon Choi; J. Joshua Yang; Min Xian Zhang; Matthew J. Marinella; Conrad D. James; R. Stanley Williams

doi:10.1063/1.4809530

A physical model of switching dynamics in tantalum oxide memristive devices

Patrick R. Mickel, Andrew J. Lohn, Byung Joon Choi, J. Joshua Yang, Min Xian Zhang, Matthew J. Marinella, Conrad D. James, R. Stanley Williams

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

We present resistive switching model for TaOx memristors, which demonstrates that the radius of a tantalum rich conducting filament is the state variable controlling resistance. The model tracks the flux of individual oxygen ions and permits the derivation and solving of dynamical and static state equations. Model predictions for ON/OFF switching were tested experimentally with TaOx devices and shown to be in close quantitative agreement, including the experimentally observed transition from linear to non-linear conduction between R_ON and R_OFF. This work presents a quantitative model of state variable dynamics in TaOx memristors, with direct comparison to high-speed resistive switching data.

Original language	English
Article number	223502
Journal	Applied Physics Letters
Volume	102
Issue number	22
DOIs	https://doi.org/10.1063/1.4809530
State	Published - 3 Jun 2013

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@article{ca5af40f33f9445abfbb16b6c51db658,

title = "A physical model of switching dynamics in tantalum oxide memristive devices",

abstract = "We present resistive switching model for TaOx memristors, which demonstrates that the radius of a tantalum rich conducting filament is the state variable controlling resistance. The model tracks the flux of individual oxygen ions and permits the derivation and solving of dynamical and static state equations. Model predictions for ON/OFF switching were tested experimentally with TaOx devices and shown to be in close quantitative agreement, including the experimentally observed transition from linear to non-linear conduction between RON and ROFF. This work presents a quantitative model of state variable dynamics in TaOx memristors, with direct comparison to high-speed resistive switching data.",

author = "Mickel, \{Patrick R.\} and Lohn, \{Andrew J.\} and \{Joon Choi\}, Byung and \{Joshua Yang\}, J. and Zhang, \{Min Xian\} and Marinella, \{Matthew J.\} and James, \{Conrad D.\} and \{Stanley Williams\}, R.",

year = "2013",

month = jun,

day = "3",

doi = "10.1063/1.4809530",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "22",

}

TY - JOUR

T1 - A physical model of switching dynamics in tantalum oxide memristive devices

AU - Mickel, Patrick R.

AU - Lohn, Andrew J.

AU - Joon Choi, Byung

AU - Joshua Yang, J.

AU - Zhang, Min Xian

AU - Marinella, Matthew J.

AU - James, Conrad D.

AU - Stanley Williams, R.

PY - 2013/6/3

Y1 - 2013/6/3

N2 - We present resistive switching model for TaOx memristors, which demonstrates that the radius of a tantalum rich conducting filament is the state variable controlling resistance. The model tracks the flux of individual oxygen ions and permits the derivation and solving of dynamical and static state equations. Model predictions for ON/OFF switching were tested experimentally with TaOx devices and shown to be in close quantitative agreement, including the experimentally observed transition from linear to non-linear conduction between RON and ROFF. This work presents a quantitative model of state variable dynamics in TaOx memristors, with direct comparison to high-speed resistive switching data.

AB - We present resistive switching model for TaOx memristors, which demonstrates that the radius of a tantalum rich conducting filament is the state variable controlling resistance. The model tracks the flux of individual oxygen ions and permits the derivation and solving of dynamical and static state equations. Model predictions for ON/OFF switching were tested experimentally with TaOx devices and shown to be in close quantitative agreement, including the experimentally observed transition from linear to non-linear conduction between RON and ROFF. This work presents a quantitative model of state variable dynamics in TaOx memristors, with direct comparison to high-speed resistive switching data.

UR - http://www.scopus.com/inward/record.url?scp=84879111010&partnerID=8YFLogxK

U2 - 10.1063/1.4809530

DO - 10.1063/1.4809530

M3 - Article

AN - SCOPUS:84879111010

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223502

ER -

A physical model of switching dynamics in tantalum oxide memristive devices

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