A Review of Cell Operation Algorithm for 3D NAND Flash Memory

Jong Kyung Park; Sarah Eunkyung Kim

doi:10.3390/app122110697

A Review of Cell Operation Algorithm for 3D NAND Flash Memory

Jong Kyung Park, Sarah Eunkyung Kim

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Review article › peer-review

10 Scopus citations

Abstract

The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based on excellent cell characteristics and manufacturability; as such, the demand for increasing the bit density and the performance has been rapidly increasing. In this paper, we will review the device operation algorithm and techniques to improve the cell characteristics and reliability in terms of optimization of individual program, read and erase operation, and system level performance.

Original language	English
Article number	10697
Journal	Applied Sciences (Switzerland)
Volume	12
Issue number	21
DOIs	https://doi.org/10.3390/app122110697
State	Published - Nov 2022

Keywords

3D NAND flash memory
algorithm
cell operation
erase
performance
program
read
reliability

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.3390/app122110697

Cite this

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AB - The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based on excellent cell characteristics and manufacturability; as such, the demand for increasing the bit density and the performance has been rapidly increasing. In this paper, we will review the device operation algorithm and techniques to improve the cell characteristics and reliability in terms of optimization of individual program, read and erase operation, and system level performance.

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KW - algorithm

KW - cell operation

KW - erase

KW - performance

KW - program

KW - read

KW - reliability

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A Review of Cell Operation Algorithm for 3D NAND Flash Memory

Abstract

Keywords

UN SDGs

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