Abstract
The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based on excellent cell characteristics and manufacturability; as such, the demand for increasing the bit density and the performance has been rapidly increasing. In this paper, we will review the device operation algorithm and techniques to improve the cell characteristics and reliability in terms of optimization of individual program, read and erase operation, and system level performance.
| Original language | English |
|---|---|
| Article number | 10697 |
| Journal | Applied Sciences (Switzerland) |
| Volume | 12 |
| Issue number | 21 |
| DOIs | |
| State | Published - Nov 2022 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 9 Industry, Innovation, and Infrastructure
Keywords
- 3D NAND flash memory
- algorithm
- cell operation
- erase
- performance
- program
- read
- reliability
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