A Study on Flexibility Improvement of AMOLED Back Plane and Mask Reduction Process Architecture Using Photo-Sensitive Organic Insulation Films

In young Chung; Guanghai Jin; Hyunsik Yoon

doi:10.1149/2162-8777/add765

A Study on Flexibility Improvement of AMOLED Back Plane and Mask Reduction Process Architecture Using Photo-Sensitive Organic Insulation Films

In young Chung, Guanghai Jin, Hyunsik Yoon

Dept. of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, the method of patterning inter-layer deposition (ILD) and passivation layer (PVX) of the AMOLED back plane thin film transistor structure with an organic film was studied. By replacing the inorganic film of SiNx + SiO₂ with an organic film Poly-imide, back plane suitable for flexible AMOLED was secured. It was possible to secure equivalent TFT transfer characteristics of device compared to inorganic inter layer structure by applying low-temperature buffer and 2nd gate insulator SiNx to the organic inter layer TFT device. Also, VIA + passivation layer 2 mask photo process was replaced with 1 mask photo process using a VIA Half-tone mask. Both processes were able to secure a process architecture that can be applied to flexible and rollable displays in the future by using photo-sensitive organic insulation films.

Original language	English
Article number	064001
Journal	ECS Journal of Solid State Science and Technology
Volume	14
Issue number	6
DOIs	https://doi.org/10.1149/2162-8777/add765
State	Published - 1 Jun 2025

Keywords

half-tone mask
inter layer deposition
poly-imide

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10.1149/2162-8777/add765

Cite this

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title = "A Study on Flexibility Improvement of AMOLED Back Plane and Mask Reduction Process Architecture Using Photo-Sensitive Organic Insulation Films",

abstract = "In this work, the method of patterning inter-layer deposition (ILD) and passivation layer (PVX) of the AMOLED back plane thin film transistor structure with an organic film was studied. By replacing the inorganic film of SiNx + SiO2 with an organic film Poly-imide, back plane suitable for flexible AMOLED was secured. It was possible to secure equivalent TFT transfer characteristics of device compared to inorganic inter layer structure by applying low-temperature buffer and 2nd gate insulator SiNx to the organic inter layer TFT device. Also, VIA + passivation layer 2 mask photo process was replaced with 1 mask photo process using a VIA Half-tone mask. Both processes were able to secure a process architecture that can be applied to flexible and rollable displays in the future by using photo-sensitive organic insulation films.",

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AU - Chung, In young

AU - Jin, Guanghai

AU - Yoon, Hyunsik

N1 - Publisher Copyright: © 2025 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

PY - 2025/6/1

Y1 - 2025/6/1

N2 - In this work, the method of patterning inter-layer deposition (ILD) and passivation layer (PVX) of the AMOLED back plane thin film transistor structure with an organic film was studied. By replacing the inorganic film of SiNx + SiO2 with an organic film Poly-imide, back plane suitable for flexible AMOLED was secured. It was possible to secure equivalent TFT transfer characteristics of device compared to inorganic inter layer structure by applying low-temperature buffer and 2nd gate insulator SiNx to the organic inter layer TFT device. Also, VIA + passivation layer 2 mask photo process was replaced with 1 mask photo process using a VIA Half-tone mask. Both processes were able to secure a process architecture that can be applied to flexible and rollable displays in the future by using photo-sensitive organic insulation films.

AB - In this work, the method of patterning inter-layer deposition (ILD) and passivation layer (PVX) of the AMOLED back plane thin film transistor structure with an organic film was studied. By replacing the inorganic film of SiNx + SiO2 with an organic film Poly-imide, back plane suitable for flexible AMOLED was secured. It was possible to secure equivalent TFT transfer characteristics of device compared to inorganic inter layer structure by applying low-temperature buffer and 2nd gate insulator SiNx to the organic inter layer TFT device. Also, VIA + passivation layer 2 mask photo process was replaced with 1 mask photo process using a VIA Half-tone mask. Both processes were able to secure a process architecture that can be applied to flexible and rollable displays in the future by using photo-sensitive organic insulation films.

KW - half-tone mask

KW - inter layer deposition

KW - poly-imide

UR - https://www.scopus.com/pages/publications/105008096389

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JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 6

M1 - 064001

ER -

A Study on Flexibility Improvement of AMOLED Back Plane and Mask Reduction Process Architecture Using Photo-Sensitive Organic Insulation Films

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